Applied Physics Letters · 1990 · 62 citations · 6 references
EngineeringElectrical EngineeringMaterials ScienceOpticsOptoelectronicsSemiconductor MaterialsOptical Properties Of SemiconductorsOptical SourcesQuantum OptoelectronicsQuantum Well DevicesQuantum WellsSemiconductor HeterostructuresOptical Gain In SemiconductorsOptical Path LengthPhotoluminescence In Quantum WellsQuantum Well GainQuantum Well HeterostructuresQuantum Well StructuresReflectivitySpontaneous Emission
Data are presented demonstrating a strong influence of a closely spaced AlAs/GaAs distributed Bragg reflector on the spontaneous emission characteristics of an InGaAs-GaAs quantum well. The mirror to quantum well spacings on different crystal samples correspond to optical path lengths of either 1/4, 1/2, or 3/4 of the emission wavelength. The samples are characterized using photoluminescence, electroluminescence, and reflectivity measurements. Spontaneous emission is found to be greatly enhanced for a 1/2 wavelength spacing, while 1/4 and 3/4 spacings suppress the spontaneous emission by a factor of ≳1000.
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