Effect of an AlAs/GaAs mirror on the spontaneous emission of an InGaAs-GaAs quantum well

Abstract

Data are presented demonstrating a strong influence of a closely spaced AlAs/GaAs distributed Bragg reflector on the spontaneous emission characteristics of an InGaAs-GaAs quantum well. The mirror to quantum well spacings on different crystal samples correspond to optical path lengths of either 1/4, 1/2, or 3/4 of the emission wavelength. The samples are characterized using photoluminescence, electroluminescence, and reflectivity measurements. Spontaneous emission is found to be greatly enhanced for a 1/2 wavelength spacing, while 1/4 and 3/4 spacings suppress the spontaneous emission by a factor of ≳1000.