Deep Trap Levels in Zn-Annealed ZnSe Single Crystals

Abstract

Deep levels of both, electron and hole traps in n-type ZnSe single crystals are studied by deep level transient spectroscopy using electrical and optical trap filling pulses. The single crystals are annealed in liquied Zn under various conditions of temperature (700 to 1000°C) and time (1 to 150 h). The trap concentration profiles and the effects of Zn-annealing conditions on the spectra are examined. Five electron-traps with the activation energies ranging from Ec – 0.20 to Ec – 1.0 eV are detected and six hole traps with the activation energies from Ev + 0.19 to Ev + 0.87 eV and their origins discussed.