SID Symposium Digest of Technical Papers · 2007 · 33 citations · 6 references
Natural SciencesMaterials SciencePhysicsCondensed Matter PhysicsElectronic MaterialsSemiconductor MaterialsAb Initio MethodsAmorphous SemiconductorsCarrier TransportOxide SemiconductorsSemiconductor Device MaterialsSemiconductor PhysicsAmorphous Oxide SemiconductorsAmorphous OxidesBand Structure CalculationElectronic Structure TheoryOxide Electronic Structure
Abstract This paper briefly describes unique electron transport properties of transparent amorphous oxide semiconductors (TAOS) for TFT performance along with our material design concept. Emphasized is essential importance of indium ion for emergence of high field effect mobility on the basis of recent results on electronic structure calculation on amorphous InGaZnO 4 .
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