Physical Review Letters · 1995 · 38 citations · 12 references
Natural SciencesElectrical EngineeringPhysicsCondensed Matter PhysicsSemiconductor MaterialsSpectroscopyNoise In Electronic DevicesNoise In Semiconductor DevicesQuantum TunnelingSemiconductor Crystal GrowthSemiconductor PhysicsSpintronicsMolecular Beam EpitaxyQuantum Tunneling DynamicsQuantum Tunneling EffectsTunneling In SemiconductorsTunneling Phenomena
Telegraph noise, i.e., two-level fluctuations (TLF), in the magnetoresistance of Er-doped GaAs has been used to probe the magnetic moment of the small ErAs clusters formed during the molecular beam epitaxy growth process. At high temperatures the TLF are thermally activated but below 350 mK tunneling of the magnetization dominates.
12
Macroscopic quantum tunneling in antiferromagnets
B. Barbara, Eugene M. Chudnovsky · Physics Letters A · 1990 · 224 citations