Current–voltage relations for the dual channel double heterostructure optoelectronic switch

Abstract

A theoretical model for an optoelectronic modulation doped thyristor is developed. The thyristor incorporates two modulation doped interfaces and as such it forms a technology base for both p- and n-type modulation doped transistors. The thyristor current–voltage (I–V) relations are developed based upon the thermionic current flow over the modulation doped junctions providing the feedback to initiate switching and upon the feedback current between quantum wells which stabilizes the device in the on state. The dependence of the carrier densities in the quantum wells upon bias are shown to be a unique property of the device. The I–V dependence is shown as a function of the critical device dimensions which are key design parameters for optoelectronic integrated circuits. The validity of the model and the structure is confirmed by comparison to the measured I–V characteristic.