Growth rate and surface microstructure in α(6H)–SiC thin films grown by chemical vapor deposition

Epitaxial Growth and Characterization of β ‐ SiC Thin Films

Peter K. Liaw, R. F. Davis · Journal of The Electrochemical Society · 1985 · 247 citations

Engineering, Materials Engineering, Materials Science +17

Chemical vapor deposition and characterization of 6H-SiC thin films on off-axis 6H-SiC substrates

Hoyoul Kong, Jeffrey T. Glass, R. F. Davis · Journal of Applied Physics · 1988 · 216 citations

Engineering, Materials Engineering, Materials Science +17

Novel refractory semiconductors

David Emin, T. L. Aselage, C. E. C. Wood · OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information) · 1987 · 104 citations

Engineering, Materials Engineering, Materials Science +17

An examination of double positioning boundaries and interface misfit in beta-SiC films on alpha-SiC substrates

Hoyoul Kong, B. L. Jiang, Jeffrey T. Glass et al. · Journal of Applied Physics · 1988 · 94 citations

Natural Sciences, Materials Engineering, Materials Science +15

Growth rate, surface morphology, and defect microstructures of β–SiC films chemically vapor deposited on 6H–SiC substrates

Hoyoul Kong, Jeffrey T. Glass, R. F. Davis · Journal of materials research/Pratt's guide to venture capital sources · 1989 · 93 citations

Natural Sciences, Materials Engineering, Materials Science +17