Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1993 · 16 citations · 0 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsOptoelectronic DevicesPhotodetectorsSemiconductor HeterostructuresThermal Properties Of SemiconductorsGallium NitrideGallium Nitride (Gan) MaterialsNitridationNitride PassivationNitride Thin FilmsNitrides Thin FilmsPhotodissociation ProcessesPhoton Absorption
A nitride layer can be formed at low temperatures on GaAs(100) by simultaneous exposure to ammonia and UV photons in an ultrahigh vacuum environment. This process is a result of nonthermal photodissociation of adsorbed ammonia, initiated both by direct photon absorption and by attachment of hot substrate carriers. The nitride layer consists of a mixture of thermally stable GaN and volatile AsN; the latter desorbs below 800 K.