Alloyed Junction Avalanche Transistors

Abstract

A new device, the avalanche transistor, is described. Its properties derive from the utilization of the multiplication inherent in the breakdown process of reverse-biased semiconductor junctions. These junction transistors have regions of designable alpha greater than unity and are similar in many respects to point-contact and hook-collector transistors. They should, however, have advantages in speed and designability. Large regions of negative resistance of moderate magnitude can also be obtained in appropriate circuits. The device should find wide application in both switching and transmission. Design information for avalanche transistors is given.