Physical degradation of GaN HEMT devices under high drain bias reliability testing - Concepedia

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Physical degradation of GaN HEMT devices under high drain bias reliability testing

98

Citations

10

References

2009

Year

S.Y. Park, Carlo Floresca, Uttiya Chowdhury, J. L. Jiménez, Cathy Lee, Edward Beam, P. Saunier, T. Balistreri, Moon J. Kim

Microelectronics Reliability

Electrical EngineeringEngineeringApplied PhysicsGan Hemt DevicesGan Power DevicePhysical DegradationDevice ReliabilityMicroelectronics

References

	Year	Citations

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