Analyzing the effects of front-surface fields on back-junction silicon solar cells using the charge-collection probability and the reciprocity theorem

Abstract

In this work, a one-dimensional analytical model to calculate the quantum efficiency in back-junction solar cells with and without a high-low junction on the front side is presented. The analytical model, based on the reciprocity theorem for charge collection, is compared with numerical device simulations taking into account the influence of high-injection effects. Using the analytical model, the influence of base doping concentration and surface recombination velocity on the internal quantum efficiency of a n-type back-junction solar cell is analyzed.