Temperature dependence of threshold current for a quantum-well heterostructure laser

References

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Hot electrons and phonons under high intensity photoexcitation of semiconductors Jagdeep Shah Solid-State Electronics SemiconductorsPhotoluminescenceEngineeringPhysicsHigh Intensity Photoexcitation	1978	303
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Room-temperature laser operation of quantum-well Ga(1−<i>x</i>)Al<i>x</i>As-GaAs laser diodes grown by metalorganic chemical vapor deposition Russell D. Dupuis, P.D. Dapkus, N. Holonyak, Applied Physics Letters Aluminium NitrideEngineeringLaser ApplicationsLaser MaterialDh Lasers	1978	176
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Temperature dependence of threshold current for quantum-well Al<i>x</i>Ga1−<i>x</i>As-GaAs heterostructure laser diodes R. Chin, N. Holonyak, B. A. Vojak, Applied Physics Letters SemiconductorsSemiconductor TechnologyElectrical EngineeringCategoryquantum ElectronicsEngineering	1980	118
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LPE In1−<i>x</i>Ga<i>x</i>P1−<i>z</i>As<i>z</i> (<i>x</i>∼0.12, <i>z</i>∼0.26) DH laser with multiple thin-layer (&lt;500 Å) active region E. A. Rezek, N. Holonyak, B. A. Vojak, Applied Physics Letters EngineeringLaser ScienceLaser PhysicsLaser ApplicationsLaser Material	1977	80

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