Applied Physics Letters · 2008 · 36 citations · 17 references
Natural SciencesMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsElectron MicroscopyQuantum DotsScanning Probe MicroscopySemiconductor Device MaterialsSemiconductor NanomaterialsTransmission Electron MicroscopyQuantum Dot DevicesQuantum Dot MaterialsScale CharacterizationScanning Transmission Electron MicroscopySemiconductor Quantum Dots
Atom probe tomography (APT) has been used to study InxGa1−xAs quantum dots buried in GaAs. The dots have an average base width of 16.1±1.1nm and height of 3.5±0.3nm, but a wide range of sizes. APT composition profiles across the dots are similar to a previous study by cross-sectional scanning transmission electron microscopy, but show significant gallium incorporation (average x=0.22±0.01). The direct three-dimensional nature of the APT data also reveals the complex spatial distribution of indium within the dots. Data such as these are vital for optimizing the performance of quantum dot materials and devices.
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Semiconductor Clusters, Nanocrystals, and Quantum Dots
A. Paul Alivisatos · Science · 1996 · 11.4K citations
In situ site-specific specimen preparation for atom probe tomography
Keith Thompson, D. Lawrence, DJ Larson et al. · Ultramicroscopy · 2006 · 1.7K citations
Dominique Bruls, J. W. A. M. Vugs, P. M. Koenraad et al. · Applied Physics Letters · 2002 · 221 citations · Full text