FEM-based thermal analysis of IGBT

Abstract

A novel 3-D IGBT thermal model is implemented. The temperature distribution in different conditions was analyzed by using finite element thermal analysis software ANSYS. Simulation results under the conditions of different heat source spacing, respectively 5μm, 10μm and 15μm, show that increasing the heat source spacing appropriately can reduce the thermal coupling effect, thereby reducing the peak temperature of IGBT. Temperature dependent thermal conductivity of Si was considered during simulation, the results indicate the peak temperature rise 4.8K in the same power. The results of thermal resistance obtained by simulation are in agreement with the measured value.