IEE Proceedings - Circuits Devices and Systems · 2004 · 17 citations · 5 references
EngineeringComputer EngineeringElectrical EngineeringMicroelectronicsPower ElectronicsSemiconductor DevicesDevice CharacterizationDevice ModelingDevice SimulationHeat Transfer ModelingThermal ManagementThermal Properties Of SemiconductorsElectric Circuit ModelsElectro-thermal ModelingElectrothermal SimulationFinite Element Model ValidationFinite Element ModelingSelf-heating ModelingThermal Circuit ModelingThermal Management Of Semiconductor Devices
A novel IGBT electrothermal model is implemented for the first time in PSpice for the simulation of steady state and transient temperature dependent IGBT operation including self-heating and latchup. A thermal circuit representing the characteristics of the IGBT package is developed and validated against a finite element model and experimental results. A novel electrical IGBT model based on the Kraus model is developed to account for the electrical impact of instantaneous junction temperature variations owing to self-heating. The resulting electrothermal model is validated against experimental DC and transient FBSOA measurements.
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