Applied Physics Letters · 1978 · 70 citations · 1 references
Natural SciencesMaterials SciencePhysicsMaterials ChemistryPhysical ChemistryThin FilmsAmorphous SemiconductorsSemiconductor PhysicsSemiconductor SurfacesSemiconductor Thin FilmsSilicon MaterialsThin Film Optical PropertiesAmorphous Semiconductor FilmsAmorphous SiliconLorentz-lorenz RelationPlasma DepositionRadial FlowReactive DepositionRutherford ScatteringSilicon Thin Films
Amorphous Si-N films were prepared by reactive plasma deposition from SiH4 and NH3 in a radial flow reactor at 275 °C, and studied using 1.8-MeV 4He+ Rutherford backscattering analysis. The films had a Si/N ratio ranging from 0.75 to 1.5, density from 2.8 to 2.1 g cm−3, and refractive index from 1.9 to 2.3. These data have been correlated using the Lorentz-Lorenz equation, yielding a self-consistent set of electronic polarizabilities αN and αSi. The αSi is found to be a function of the Si/N ratio, indicating the increasing presence of Si-H complexes in off-stoichiometric films.
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Principles and applications of ion beam techniques for the analysis of solids and thin films
J. W. Mayer, M‐A. Nicolet, T.M. Buck et al. · Thin Solid Films · 1973 · 332 citations