Highly-sensitive InGaAs-2DEG Hall device made of pseudomorphic In0.52A10.48As/In0.8Ga0.2As heterostructure

Integrated semiconductor magnetic field sensors

H. Baltes, R.S. Popović · Proceedings of the IEEE · 1986 · 330 citations

Magnetism, Electrical Engineering, Magnetic Field Sensor +12

Integrated silicon magnetic-field sensors

S. Kordić · Sensors and Actuators · 1986 · 59 citations

Magnetism, Electrical Engineering, Silicon Magnetic-field Sensors +9

Highly-sensitive Hall element with quantum-well superlattice structures

Yuta Sugiyama, Hajime Soga, Munecazu Tacano · Journal of Crystal Growth · 1989 · 30 citations

Quantum Science, Engineering, Physics +7

Highly sensitive split-contact magnetoresistor with AlAs/GaAs superlattice structures

Yuta Sugiyama, Hajime Soga, Munecazu Tacano et al. · IEEE Transactions on Electron Devices · 1989 · 22 citations

Wide-bandgap Semiconductor, Magnetism, Electrical Engineering +13

High electron mobility pseudomorphic In0.52Al0.48As/In0.8Ga0.2As heterostructure on InP grown by flux-stabilized MBE

Yoshinobu Sugiyama, Yukihiro Takeuchi, Munecazu Tacano · Journal of Crystal Growth · 1991 · 19 citations

Semiconductor Technology, Engineering, Flux-stabilized Mbe +6