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Improvement of GaAs metal–semiconductor field-effect transistor drain–source breakdown voltage by oxide surface passivation grown by atomic layer deposition

SemiconductorsSemiconductor TechnologyElectrical EngineeringOxide Surface PassivationEngineeringApplied PhysicsTime-dependent Dielectric BreakdownSemiconductor Device FabricationCompound SemiconductorAtomic Layer DepositionSemiconductor Device