Current and capacitance transient responses of MOS capacitor. II. Recombination centers in the surface space charge layer

Abstract

The general theory of the high frequency capacitance transient for an initially depleted surface space charge layer with nonuniform distribution of bulk recombination centers is reduced to the forms suitable for determination of the spatial distribution of the recombination center concentration and the electric field dependences of the majority and minority carrier emission rates of the centers. Examples of gold diffused and control MOS capacitors (without gold diffusion) on n-type and p-type silicon are presented as illustrations.