Japanese Journal of Applied Physics · 1991 · 17 citations · 5 references
Natural SciencesMaterials ScienceElectronic MaterialsSemiconductor MaterialsThin FilmsCrystal GrowthEpitaxial GrowthSemiconductor Crystal GrowthSemiconductor Device MaterialsSemiconductor PhysicsSemiconductor Thin FilmsAtomic Layer EpitaxyEpitaxial Film GrowthEpitaxial Growth KineticsEpitaxial Thin-film GrowthGrowth Per CycleMolecular Beam EpitaxySelf-limiting GrowthSubstrate Temperature Effects
ZnTe films were grown on GaAs substrates by atomic layer epitaxy using the molecular beam epitaxy technique. We investigated the growth rate per cycle as a function of beam intensities of Zn and Te at the substrate temperature of 250°C and obtained the self-limiting growth of 0.5 monolayer per cycle, independent of Zn or Te beam intensity in the selected ranges.
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