Atomic-layer epitaxy of (100) CdTe on GaAs substrates

Vacancy-Buckling Model for the (2×2) GaAs(111) Surface

S. Y. Tong, W. N. Mei · Physical Review Letters · 1984 · 212 citations

Natural Sciences, Materials Science, Physics +15

Growth of (100)CdTe films of high structural perfection on (100)GaAs substrates by molecular beam epitaxy

R. N. Bicknell, R. W. Yanka, N. C. Giles et al. · Applied Physics Letters · 1984 · 99 citations

Engineering, Materials Engineering, Materials Science +17

High quality CdTe epilayers on GaAs grown by hot-wall epitaxy

D. Schikora, H. Sitter, J. Humenberger et al. · Applied Physics Letters · 1986 · 62 citations

Engineering, Electrical Engineering, Materials Science +17

Atomic geometries of zincblende compound semiconductor surfaces: Similarities in surface rehybridizations

Antoine Kahn · Surface Science · 1986 · 40 citations

Natural Sciences, Chemistry, Materials Science +14

Growth and characterization of high-quality CdTe epilayers on GaAs substrates by hot-wall epitaxy

H. Sitter, K. Lischka, W. Faschinger et al. · Journal of Crystal Growth · 1988 · 36 citations

Engineering, Materials Engineering, Materials Science +12