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Blackbody-like emission of terahertz radiation from AlGaN/GaN heterostructure under electron heating in lateral electric field
26
Citations
17
References
2011
Year
Aluminium NitrideWide-bandgap SemiconductorElectrical EngineeringEngineeringPhysicsLateral Electric FieldOptical PropertiesNanoelectronicsApplied PhysicsBlackbody-like EmissionAluminum Gallium NitrideTerahertz TechniqueGan Power DeviceElectric FieldTerahertz RadiationCategoryiii-v SemiconductorOptoelectronicsTerahertz Radiation Emission
The authors report on the observation and study of terahertz radiation emission from modulation-doped AlGaN/GaN heterostructure under conditions of heating of a two-dimensional electron gas in the lateral electric field. The experimental results are compared with the theoretical model of blackbody-like emission from hot two-dimensional electrons. Complementary transport measurements and a theoretical simulation were carried out to determine the dependence of effective electron temperature on electric field. The role of nonequilibrium optical phonon accumulation is discussed.
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