A technique for the growth of single crystal films of zinc sulphide on (100) gallium arsenide by radio frequency sputtering

Abstract

Thin films of single crystal cubic zinc sulphide has been grown on (100) oriented gallium arsenide substrates by a radio frequency sputtering technique. The sputtering system is of novel design, being constructed to UHV standards and capable of producing oil-free ultraclean conditions during the sputtering process. A balanced RF oscillator drives the water cooled disc and annulus electrodes to which sintered powder ZnS targets are bonded with an indium-gallium eutectic. Highly ordered films are grown at rates of up to 100 nm h-1 at temperatures between 250 degrees C and 300 degrees C.