Applied Physics Letters · 1991 · 28 citations · 7 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsIii-v SemiconductorsQuantum TunnelingQuantum WellsSemiconductor HeterostructuresSemiconductor PhysicsWide Band Gap SemiconductorsCurrent-voltage CharacterizationCurrent-voltage RelationsCurrent-voltage RelationshipQuantum Tunneling EffectsQuantum Well HeterostructuresTunneling BarriersTunneling DiodesTunneling In Semiconductors
For the purpose of experimentally demonstrating the enhancement of electron-wave reflection by a multi-quantum barrier (MQB) consisting of multiple combinations of quarter de Broglie wavelength hetero-stacks, we have fabricated two types of n-GaAs/i-barrier/n-GaAs tunneling diodes with a bulk AlxGa1−xAs barrier and an AlxGa1−xAs/GaAs MQB. From the current-voltage characteristic at 77 K, it has been clarified that electrons are well reflected by the MQB. The potential barrier height, virtually increased by the MQB, is estimated to be about 80 meV, which is in good agreement with a theoretical expectation.
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