Optimized Gallium Arsenide Modulators for Advanced Modulation Formats

Abstract

We review the guided-wave subcomponents required in the design of high-functionality modulators for advanced modulation formats using the GaAs/AlGaAs material system. In these complex devices, small loss contributions rapidly accumulate unless the substructures are well optimized, not only for low loss but also for process tolerance. Results for an advanced 40-Gb/s DQPSK modulator are presented.