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Fabrication of 5nm linewidth and 14nm pitch features by nanoimprint lithography

603

Citations

16

References

2004

Year

TLDR

We report advances in nanoimprint lithography, its use for nanogap metal contacts, and improvements in fabrication yield. We fabricated gold contacts with 5 nm separation by nanoimprinting in resist followed by metal lift‑off, enabling single macromolecule device applications. The technique achieved 5 nm linewidth and 14 nm pitch in resist at room temperature under <15 psi, with uniform, manufacturable results across a 4‑inch wafer.

Abstract

We report advances in nanoimprint lithography, its application in nanogap metal contacts, and related fabrication yield. We have demonstrated 5nm linewidth and 14nm linepitch in resist using nanoimprint lithography at room temperature with a pressure less than 15psi. We fabricated gold contacts (for the application of single macromolecule devices) with 5nm separation by nanoimprint in resist and lift-off of metal. Finally, the uniformity and manufacturability of nanoimprint over a 4in. wafer were demonstrated.

References

YearCitations

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