Applied Physics Letters · 1995 · 45 citations · 0 references
Natural SciencesMaterials SciencePhysicsCondensed Matter PhysicsSemiconductor MaterialsSolid State PhysicsLuminescent MaterialsOptical Properties Of SemiconductorsSemiconductor PhysicsWide Band Gap SemiconductorsWide-bandgap SemiconductorsZeeman EffectGallium NitrideGallium Nitride (Gan) MaterialsInfrared EmissionLuminescence LifetimeNear-infrared EmissionZeeman SpectroscopyZeeman SplittingZeeman Transitions
We report an optical investigation of the Zeeman behavior of the deep iron acceptor in GaN grown on 6H–SiC. The characteristic ground state splitting of the near-infrared luminescence transition at 1.2988 eV allows for an unambiguous assignment to Fe3+previously proposed on the basis of ODMR results. The observed luminescence lifetime of 8 ms as well as the fine structure of the excited state are consistent with a 4T1(G)–6A1(S) transition. The 4T1(G) state is found to couple only weakly to ε-type phonon modes.