Journal of Applied Physics · 1988 · 32 citations · 5 references
Natural SciencesMaterials SciencePhysicsMaterials CharacterizationSemiconductor DevicesSemiconductor MaterialsDefects In Electronic MaterialsMicrowave SpectroscopySemiconductor DefectsSemiconductor Device MaterialsSemiconductor PhysicsSemiconductor SurfacesDeep-level DefectsDeep-level ImpuritiesLevelsSilicon DefectsSilicon Device MaterialsSilicon Electrical PropertiesSilicon ImpuritiesSurface Defects Characterization
Tungsten-related deep levels in a silicon crystal are investigated using microwave and conventional deep level transient spectroscopy. It is found that tungsten atoms have two diffusion constants. Most tungsten atoms stay near the surface of Si crystal, but the remainder go deeper than 1 μm from the surface. It is also found that tungsten atoms make both a hole trap of 0.41 eV and an electron trap of 0.22 eV. Device characteristics are found to be seriously degraded due to deep levels made of deeply diffused tungsten atoms.
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Titanium in silicon as a deep level impurity
J.-W. Chen, A. G. Milnes, A. Rohatgi · Solid-State Electronics · 1979 · 70 citations