Hetero-Epitaxial Growth of Lower Boron Phosphide on Silicon Substrate Using PH₃-B₂H₆-H₂System

Abstract

Single crystal of lower boron phosphide (B13P2) with hexagonal structure was obtained hetero-epitaxially on silicon substrate. Diborane (B2H6) and phosphine (PH3) diluted in hydrogen were used as reactant gases. The substrate temperatures were between 1050°C and 1250°C and the molecular ratio of reactants to carrier hydrogen was below 3.2×10-4. The epitaxial relations were: B13P2(110)/Si(100), B13P2(110)/Si(110) and B13P2(100)/Si(111). The lower boron phosphide was a transparent film and its resistivity was measured as 1×108 Ω-cm at room temperature.