R. Y. Koyama - Concepedia

Author

R. Y. Koyama

National Institute of Standards and Technology

Also Known As

R Y Koyama, R. Koyama, R. Y. Koyama, R.Y. Koyama, Ryuga Koyama

Publications

491

Citations

H-Index

Concepts

All Affiliations

National Institute of Standards and Technology Stanford University Tektronix (United States)Oregon Social Learning Center

About

R. Y. Koyama is an author at National Institute of Standards and Technology specializing in applied physics, engineering, and physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	10	10	441
2	Applied Physics	10	10	441
3	Electrical Engineering	6	6	120
4	Natural Sciences	2	2	141
5	Chemistry	1	1	32

R. Y. Koyama

Publications

453

Citations

H-Index

Page 1

	Year	Citations
Optical Absorption, Electroluminescence, and the Band Gap of BP R. J. Archer, R. Y. Koyama, E. E. Loebner, Physical Review Letters PhotonicsPhotoluminescenceEngineeringPhysicsOptical Properties	1964	140
Optical Properties of Indium R. Y. Koyama, N. V. Smith, W. E. Spicer Physical review. B, Solid state Optical MaterialsEngineeringPhysicsDrude TheoryOptical Properties	1973	109
GaAs field-effect transistor properties, as influenced by the local concentrations of midgap native donors and dislocations P. Dobrilla, J. S. Blakemore, A.J. McCamant, Applied Physics Letters SemiconductorsSemiconductor TechnologyElectrical EngineeringDislocation DensityPoint Defects	1985	51
Angular Anisotropies in the Photoemission from Polycrystalline Gold R. Y. Koyama, L. R. Hughey Physical Review Letters Materials ScienceElectron Emission AnglePhotoluminescenceAngular AnisotropiesEngineering	1972	40
Photoemission Studies of Indium R. Y. Koyama, W. E. Spicer Physical review. B, Solid state Occupied DensitySimilar StructurePhotoemission StudiesEngineeringPhysics	1971	32
The energy levels and the defect signature of sulfur-implanted silicon by thermally stimulated measurements R. Y. Koyama, W. E. Phillips, David R. Myers, Solid-State Electronics Defect SignatureElectrical EngineeringIon ImplantationEngineeringPhysics	1978	18
Characterization of implanted and annealed vapor phase epitaxial GaAs P. Bhattacharya, J. K. Rhee, S. J. T. Owen, Journal of Applied Physics SemiconductorsElectron Trap LevelElectrical EngineeringElectronic DevicesEngineering	1981	16
Interfacial effects related to backgating in ion-implanted GaAs MESFET's Wallace B. Leigh, J. S. Blakemore, R. Y. Koyama IEEE Transactions on Electron Devices Electrical EngineeringIon ImplantationEngineeringPhysicsNanoelectronics	1985	13
Novel variable-temperature chuck for use in the detection of deep levels in processed semiconductor wafers R. Y. Koyama, M. Buehler Review of Scientific Instruments	1979	12
Suppression of Measurement Interferences from Interface States and Mobile Ions in Thermally Stimulated Current Measurements in an MOS Capacitor W. E. Phillips, R. Y. Koyama, M. Buehler Journal of The Electrochemical Society Electrical EngineeringMos CapacitorEngineeringMetal ElectrodeOxide Electronics	1979	11

Page 1