Concepedia

High-performance GaAs MESFETs fabricated on misoriented

Y. H. Lo, J. P. Harbison, J.H. Abeles, T.P. Lee, R. E. Nahory

IEEE Electron Device Letters · 1988 · 17 citations · 3 references

DOI

Concepts

Abstract

MBE (molecular-beam-epitaxially)-grown GaAs MESFETs with 1.3 mu m gate length were fabricated on a

References

3

Long-wavelength PINFET receiver OEIC on a GaAs-on-InP heterostructure

Akira Suzuki, Tetsuji Itoh, T. Terakado et al. · Electronics Letters · 1987 · 55 citations

, , +16

GaAs MESFET's fabricated on InP substrates

K. Asano, K. Kasahara, Tamitake Itoh · IEEE Electron Device Letters · 1987 · 28 citations

, , +14

Dislocation microstructures on flat and stepped Si surfaces: Guidance for growing high-quality GaAs on (100) Si substrates

Yu‐Hwa Lo, Ming C. Wu, Hyoung‐Koo Lee et al. · Applied Physics Letters · 1988 · 27 citations

, , +17