Long-wavelength PINFET receiver OEIC on a GaAs-on-InP heterostructure

Abstract

A long-wavelength PINFET OEIC has been fabricated on a GaAs-on-InP heterostructure for the first time. A receiver sensitivity as high as −31 dBm for 600Mbit/s NRZ has been obtained. The great potential of the GaAs-on-InP hetero-structure for high-performance, long-wavelength OEIC applications has been demonstrated.