Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1985 · 33 citations · 0 references
Natural SciencesChemistryMaterials ScienceAnalytical ChemistryMass Spectrometric AnalysisPlasma PhysicsInstrumental AnalysisMass Spectrometric Elemental AnalysisMass SpectrometryMass Spectrometry Data AnalysisNitrogen OxidesNitrogen Oxides ChemistryEtch ChemistryEtch MechanismsEtchingPlasma EtchingProduct Formation PathwaysSilicon NitrideSpecies AbundanceSpecies Abundance Analysis
Basic chemical processes in a CF4/O2 plasma during etching of silicon nitride have been investigated using mass spectrometry. Samples of the discharge are extracted through a quartz capillary and the resulting variations in species abundance at a nitride/oxide interface yield information on etch reaction pathways. Mechanisms of F and CF2 attack and SiF4, N2, NO, and CN product formation are proposed. The experimental data are suitable for application in mass spectrometric endpoint detection.