Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2000 · 19 citations · 13 references
Natural SciencesMaterials SciencePhysicsElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsEpitaxial GrowthQuantum ConfinementQuantum WellsSemiconductor HeterostructuresSemiconductor LasersSemiconductor PhysicsMolecular Beam EpitaxyPhotoluminescenceQuantum Well Band StructureQuantum Well GrowthQuantum Well Growth TechniquesQuantum Well HeterostructuresQuantum Well StructuresQuantum Wires
In 0.1 Ga 0.9 As/(GaAs) 6 (AlAs) 1 quantum wires (QWRs) were naturally formed in a 3.0-nm- or 4.8-nm-thick In0.1Ga0.9As/(GaAs)6(AlAs)1 quantum well grown on a (775)B-oriented GaAs substrate by molecular beam epitaxy which has a corrugated AlAs-on-InGaAs upper interface (a period of about 40 nm and a vertical amplitude of about 2 nm) and a flat InGaAs-on-AlAs lower interface. Strong polarization dependence [P≡(I∥−I⊥)/(I∥+I⊥)=0.15] of photoluminescence spectrum from the (775)B InGaAs QWR structures (Lw=3.0 nm) was observed at 11 K, indicating their good one dimensionality. Graded index separate confinement heterostructure-type self-organized (775)B In0.1Ga0.9As/(GaAs)6(AlAs)1QWR lasers were fabricated, and they showed laser oscillation with threshold current densities of 1.7–3.1 kA/cm2 and lasing wavelengths of 833–868 nm at room temperature (27 °C) under pulsed current condition.
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