Japanese Journal of Applied Physics · 1985 · 190 citations · 13 references
EngineeringElectrical EngineeringPhysicsOptoelectronicsSemiconductor DevicesSemiconductor MaterialsLaser PhysicsOptical Properties Of SemiconductorsQuantum ConfinementQuantum WellsSemiconductor LasersSemiconductor PhysicsGainLaser ThresholdMaximum GainQuantum Well GainQuantum Well LasersQuantum Well StructuresQuantum WiresSubband Structure
Gain is given theoretically for quantum-well wire lasers where electrons are confined one-dimensionally. Maximum gain is obtained for a quantum-well wire perpendicular to light propagation, due to anisotropy of the dipole moment. Although the density-of-states is infinite at subband edges, gain remains finite due to the intraband relaxation. Therefore, high gain can be obtained by reducing intraband scatterings. Gain in 100 Å×100 Å Ga 0.47 In 0.53 As/InP quantum-well wires is about twice that in 100 Å thick conventional quantum-wells, and reduction of the laser threshold is expected.
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Quantum-well heterostructure lasers
N. Holonyak, R. M. Kolbas, Russell D. Dupuis et al. · IEEE Journal of Quantum Electronics · 1980 · 545 citations
Toward quantum well wires: Fabrication and optical properties
P. M. Petroff, A. C. Gossard, R. A. Logan et al. · Applied Physics Letters · 1982 · 452 citations