Volume and temperature dependence of the noise parameter α in Si

Experimental studies on 1/f noise

F.N. Hooge, T.G.M. Kleinpenning, L.K.J. Vandamme · Reports on Progress in Physics · 1981 · 1.1K citations

Engineering, Electrical Engineering, Physics +17

The electronic structure of impurities and other point defects in semiconductors

Sokrates T. Pantelides · Reviews of Modern Physics · 1978 · 690 citations

Natural Sciences, Materials Science, Physics +17

The dopant density and temperature dependence of electron mobility and resistivity in n-type silicon

Sheng S. Li, W. R. Thurber · Solid-State Electronics · 1977 · 268 citations

Engineering, Materials Science, Physics +17

The dopant density and temperature dependence of hole mobility and resistivity in boron doped silicon

Sheng S. Li · Solid-State Electronics · 1978 · 137 citations

Engineering, Materials Science, Physics +16

Quantum 1/<i>f</i>noise associated with ionized impurity scattering and electron-phonon scattering in condensed matter

G.S. Kousik, C. M. Van Vliet, G. Bosman et al. · Advances In Physics · 1985 · 87 citations

Natural Sciences, Physics, Condensed Matter Physics +16