A 3bit/cell nonvolatile memory with crystalline In-Ga-Zn-O TFT

Abstract

A 3bit/cell nonvolatile oxide semiconductor RAM (NOSRAM) test die comprising c-axis aligned crystal In-Ga-Zn-O TFTs has been fabricated. The write time of the test die is 100 ns. The test die collectively reads multilevel data within 900 ns with a 3bit A/D converter serving as reading circuit. The endurance of the 3bit/cell NOSRAM cell is more than 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">12</sup> cycles.