Japanese Journal of Applied Physics · 1989 · 64 citations · 2 references
Optical MaterialsEngineeringOptoelectronic DevicesIntegrated CircuitsSilicon On InsulatorImage SensorElectronic DevicesBarrier HeightOptical PropertiesIr Image SensorInfrared OpticInfrared Image SensorMolecular Beam EpitaxyMaterials ScienceElectrical EngineeringPhysicsOptoelectronic MaterialsSemiconductor Device FabricationInfrared SensorApplied Physics
Silicide/p-Si 1- x Ge x Schottky contacts were studied for using in an infrared (IR) image sensor. Si 1- x Ge x layers were grown on p-type (100) Si substrates by using molecular beam epitaxy (MBE). Schottky barrier heights of PtSi(Ge) or PdSi(Ge)/p-Si 1- x Ge x contacts decreased as the Ge content increased. When the Si 1- x Ge x layer was strained, the barrier height was smaller than when relaxed for the same value of x . These results suggest the possibility of a long wavelength (8–12 µm) IR image sensor using a silicide/p-Si 1- x Ge x Schottky contact for the strained layer monolithically grown on a p-Si CCD substrate.
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