Journal of Applied Physics · 1987 · 13 citations · 32 references
Natural SciencesMaterials SciencePhysicsCondensed Matter PhysicsMaterials PhysicsSemiconductor MaterialsAtomic Energy LevelsDefects In Electronic MaterialsElectronic Band StructureRadiation Damage In MaterialsSemiconductor DefectsSemiconductor PhysicsDeep-level DefectsDefect Energy LevelsIonizationLocal Electronic StructureRadiation-induced DefectsSuperlattice MaterialsSuperlatticesValence Band
Two kinds of deep levels have been studied in GaAs/GaAlAs superlattices: electron irradiation-induced defects and manganese. In both cases we confirm the localized character of the wave function by showing the invariance of the energy levels with respect to former band edges of the superlattice constituting materials. We obtain information on the energy levels of the electron and hole bands in the superlattice from the observed ionization energies of these deep levels and compare these results to energy level calculations.
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