Japanese Journal of Applied Physics · 1998 · 15 citations · 6 references
EngineeringMaterials EngineeringMaterials ScienceOptical MaterialsSemiconductor MaterialsThin FilmsAmorphous MaterialsOptical Properties Of SemiconductorsOptical Thin FilmsSemiconductor Device MaterialsSemiconductor Thin FilmsSilicon MaterialsAmorphous SiliconBand GapDefect DensityOptical AbsorptionOptical Band GapOptical PropertiesPolycrystalline SiliconSilicon Thin Films
Changes in electrical and optical properties induced by heat treatment with H 2 O vapor at 350 °C are reported for laser-induced amorphous silicon, low pressure chemical vapor amorphous silicon (LPCVD a-Si) and laser crystallized polycrystalline silicon films. The dark conductivity was reduced and the photoconductivity was increased by the heat treatment for these films. The optical absorption in the photon energy range lower than 1.5 eV was reduced for the a-Si films. The optical band gap was slightly increased from 1.48 eV to 1.51 eV for the LPCVD a-Si. The increase in hydrogen concentration was less than 2×10 20 cm -3 after the treatment. These results show that the heat treatment with H 2 O vapor reduces the defect density in the silicon films with a small amount of hydrogen incorporation.
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Disorder and the Optical-Absorption Edge of Hydrogenated Amorphous Silicon
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