Effects of grain size and plasma-induced modification of the dielectric on the mobility and stability of bottom gate microcrystalline silicon TFTs

Time and temperature dependence of instability mechanisms in amorphous silicon thin-film transistors

M. J. Powell, C. van Berkel, J. R. Hughes · Applied Physics Letters · 1989 · 335 citations

Engineering, Materials Science, Physics +17

Hole and electron field-effect mobilities in nanocrystalline silicon deposited at 150 °C

I‐Chun Cheng, S. Wagner · Applied Physics Letters · 2002 · 96 citations

Engineering, Electrical Engineering, Materials Science +17

Barrier-controlled carrier transport in microcrystalline semiconducting materials: Description within a unified model

T. Weis, R. Lipperheide, U. Wille et al. · Journal of Applied Physics · 2002 · 94 citations · Full text

Natural Sciences, Materials Science, Physics +17

Stable microcrystalline silicon thin-film transistors produced by the layer-by-layer technique

Pere Roca i Cabarrocas, R. Brenot, Pavel Bulkin et al. · Journal of Applied Physics · 1999 · 87 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Plasma enhanced chemical vapor deposition of silicon thin films for large area electronics

Pere Roca i Cabarrocas · Current Opinion in Solid State and Materials Science · 2002 · 63 citations

Engineering, Materials Engineering, Materials Science +16