The Investigation of the High-k Gd[sub 2]O[sub 3] (Gadolinium Oxide) Interdielectrics Deposited on the Polycrystalline Silicon

Abstract

The high- films deposited on polycrystalline silicon treated with different post rapid thermal annealing (RTA) temperatures were formed as high- interdielectrics. A combinational electrical and material analysis on the samples was performed to obtain a thorough understanding of annealing effect on the high- interdielectrics. The annealing temperature at was the optimal condition to reduce the defects and interface traps and hence improve material quality to fabricate a well-crystallized film. This high- interdielectric shows promise for future generation of nonvolatile memory applications.