High mobility metal oxide thin film transistors active-matrix organic light-emitting diode television

Abstract

We reported large size amorphous Indium-Gallium-Zinc-Oxide and Indium-Tin-Zinc-Oxide thin film transistors active-matrix organic light-emitting diode television development history in AUO. The Gen6 threshold voltage uniformity can lower than 1.0V. Amorphous Indium-Tin-Zinc-Oxide thin film transistors show a higher mobility of 33.2 cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> /VS. Amorphous 56 inches back channel etch type Indium-Tin-Zinc-Oxide active-matrix organic light-emitting diode television is 1st time revealed. Metal-organic chemical vapor deposition system is used to evaluate the new high mobility material. The side-by-side organic light-emitting diode device is realized by fine metal mask. The dam and fill encapsulation method shows a simple process procedure and highly stability. Ink jet printing is adopted to produce a small size full color panel. By the application of compensation pixel circuit, the panel drove by AUO engine shows an excellent characteristic.