Liquid phase epitaxial growth of In1−Ga P1−As On GaAs substrates

Determination of the lattice constant of epitaxial layers of III-V compounds

J. Hornstra, W. Bartels · Journal of Crystal Growth · 1978 · 494 citations

Natural Sciences, Materials Science, Physics +14

The importance of lattice mismatch in the growth of Ga<i>x</i>In1−<i>x</i>P epitaxial crystals

G. B. Stringfellow · Journal of Applied Physics · 1972 · 306 citations

Natural Sciences, Materials Science, Physics +17

Calculation of Miscibility Gap in Quaternary InGaPAs with Strictly Regular Solution Approximation

Kentaro Onabe · Japanese Journal of Applied Physics · 1982 · 135 citations

Natural Sciences, Materials Engineering, Materials Science +8

The effect of elastic strain on energy band gap and lattice parameter in III-V compounds

G.H. Olsen, C. J. Nuese, R. T. Smith · Journal of Applied Physics · 1978 · 109 citations

Engineering, Materials Science, Physics +17

Asymmetric Cracking in III–V Compounds

G.H. Olsen, M. S. Abrahams, T.J. Zamerowski · Journal of The Electrochemical Society · 1974 · 106 citations

Natural Sciences, Materials Engineering, Materials Science +17