T. Hijikata

Reduction in Threshold Current Density of Quantum Well Lasers Grown by Molecular Beam Epitaxy on 0.5° Misoriented (111)B Substrates

Toshiro Hayakawa, Masafumi Kondo, Takahiro Suyama et al. · Japanese Journal of Applied Physics · 1987 · 163 citations

Semiconductor Technology, Photonics, Epitaxial Growth +15

Enhancement in Optical Transition in (111)-Oriented GaAs-AlGaAs Quantum Well Structures

Toshiro Hayakawa, Kosei Takahashi, Masafumi Kondo et al. · Physical Review Letters · 1988 · 116 citations

Categoryquantum Electronics, Photonics, Optical Transition +13

Near-ideal low threshold behavior in (111) oriented GaAs/AlGaAs quantum well lasers

T. Hayakawa, Takahito Suyama, K. Takahashi et al. · Applied Physics Letters · 1988 · 91 citations

Wide-bandgap Semiconductor, Photonics, Well Width Lz +10

Visible GaAlAs V-channeled substrate inner stripe laser with stabilized mode using <i>p</i>-GaAs substrate

Shuji Yamamoto, H. Hayashi, S. Yano et al. · Applied Physics Letters · 1982 · 72 citations

Photonics, Optical Materials, New Visible Laser +11

Suppression of feedback-induced noise in short-cavity V-channeled substrate inner stripe lasers with self-oscillation

S. Matsui, H. Takiguchi, H. Hayashi et al. · Applied Physics Letters · 1983 · 64 citations