K. Takahashi

Near-ideal low threshold behavior in (111) oriented GaAs/AlGaAs quantum well lasers

T. Hayakawa, Takahito Suyama, K. Takahashi et al. · Applied Physics Letters · 1988 · 91 citations

Wide-bandgap Semiconductor, Photonics, Well Width Lz +10

Interface disorder in GaAs/AlGaAs quantum wells grown by molecular beam epitaxy at high substrate temperature

T. Hayakawa, Takahito Suyama, K. Takahashi et al. · Applied Physics Letters · 1985 · 64 citations

Semiconductors, Photoluminescence, Engineering +12

Interface disorder in GaAs/AlGaAs quantum wells grown by molecular beam epitaxy on 0.5°-misoriented (111)<i>B</i> substrates

T. Hayakawa, M. Kondo, Toshihiro Morita et al. · Applied Physics Letters · 1987 · 27 citations

Semiconductors, Materials Science, Engineering +15

Improvements in AlGaAs laser diodes grown by molecular beam epitaxy using a compositionally graded buffer layer

T. Hayakawa, Takahito Suyama, M. Kondo et al. · Applied Physics Letters · 1986 · 21 citations

Aluminium Nitride, Optical Materials, Engineering +16

Effect of group V/III flux ratio on deep electron traps in Al<i>x</i>Ga1−<i>x</i>As (<i>x</i>=0.7) grown by molecular beam epitaxy

T. Hayakawa, M. Kondo, Takahito Suyama et al. · Applied Physics Letters · 1986 · 19 citations

Materials Science, Semiconductors, Electrical Engineering +15