Growth modes and reduction of hillock density in migration enhanced epitaxy of GaAs(111)B

Reflection high-energy electron diffraction oscillations from vicinal surfaces—a new approach to surface diffusion measurements

J.H. Neave, Peter J. Dobson, B.A. Joyce et al. · Applied Physics Letters · 1985 · 753 citations

Natural Sciences, Materials Science, Semiconductor Materials +16

Migration-Enhanced Epitaxy of GaAs and AlGaAs

Yoshiji Horíkoshi, Minoru Kawashima, Hiroshi Yamaguchi · Japanese Journal of Applied Physics · 1988 · 366 citations

Engineering, Electrical Engineering, Materials Science +15

Morphology of Epitaxial Growth of GaAs by a Molecular Beam Method: The Observation of Surface Structures

A. Y. Cho · Journal of Applied Physics · 1970 · 317 citations

Natural Sciences, Materials Engineering, Materials Science +17

Anisotropic surface migration of Ga atoms on GaAs (001)

Kimihiro Ohta, Takeshi Kojima, Tadashi Nakagawa · Journal of Crystal Growth · 1989 · 203 citations

Natural Sciences, Materials Science, Physics +14

Reduction in Threshold Current Density of Quantum Well Lasers Grown by Molecular Beam Epitaxy on 0.5° Misoriented (111)B Substrates

Toshiro Hayakawa, Masafumi Kondo, Takahiro Suyama et al. · Japanese Journal of Applied Physics · 1987 · 163 citations

Engineering, Electrical Engineering, Materials Science +17