Yasushi Takano

Influences of initial nitridation and buffer layer deposition on the morphology of a (0001) GaN layer grown on sapphire substrates

Shunro Fuke, Hidekazu Teshigawara, Kazuhiro Kuwahara et al. · Journal of Applied Physics · 1998 · 82 citations

Materials Science, Initial Nitridation, Materials Engineering +13

Influence of Thermal Annealing on GaN Buffer Layers and the Property of Subsequent GaN Layers Grown by Metalorganic Chemical Vapor Deposition

Takahiro Ito, Masatomo Sumiya, Yasushi Takano et al. · Japanese Journal of Applied Physics · 1999 · 63 citations

Materials Science, Wide-bandgap Semiconductor, Electrical Engineering +15

Reduction of threading dislocations by InGaAs interlayer in GaAs layers grown on Si substrates

Yasushi Takano, M. Hisaka, N. Fujii et al. · Applied Physics Letters · 1998 · 60 citations

Engineering, Strained Layer Superlattices, Semiconductors +17

Effect of AlN buffer layer deposition conditions on the properties of GaN layer

Takahiro Ito, Kohji Ohtsuka, Kazuhiro Kuwahara et al. · Journal of Crystal Growth · 1999 · 29 citations

Materials Science, Aluminium Nitride, Electrical Engineering +9

Realization of mirror surface in (111)- and (110)-oriented GaAs by migration-enhanced epitaxy

Yasushi Takano, M. López‐López, T. Torihata et al. · Journal of Crystal Growth · 1991 · 27 citations

Electrical Engineering, Epitaxial Growth, Engineering +9