Hydrostatic-pressure dependencies of deep impurity levels in zinc-blende semiconductors

Abstract

The derivatives with respect to hydrostatic pressure are predicted for deep levels associated with s- and p-bonded impurities in Si, Ge, AlP, AlAs, AlSb, GaP, GaAs, GaSb, InP, InAs, InSb, and ZnSe. It is shown that by combining data, both for deep levels and for their hydrostatic-pressure derivatives, with theory it is often possible to determine (i) the site of the impurity, (ii) the symmetry of the deep level, and (iii) a quite small number of substitutional s- and p-bonded impurities that could be responsible for the data. We use this method to argue that the deep levels observed by Aladashvili et al. in InSb to lie in the interval between 0.1 and 0.15 eV above the valence-band maximum are probably ${A}_{1}$-symmetric levels associated with ${\mathrm{C}}_{\mathrm{In}}$ and/or antisite ${\mathrm{Sb}}_{\mathrm{In}}$ (or levels associated with defect complexes involving these defects).