Interfacial and microstructural properties of zirconium oxide thin films prepared directly on silicon

High-κ gate dielectrics: Current status and materials properties considerations

G. D. Wilk, Robert M. Wallace, J. Anthony · Journal of Applied Physics · 2001 · 5.9K citations

Engineering, Materials Engineering, Materials Science +17

Alternative dielectrics to silicon dioxide for memory and logic devices

Angus I. Kingon, Jon‐Paul Maria, S. K. Streiffer · Nature · 2000 · 1.3K citations

Engineering, Materials Engineering, Materials Science +14

Thermal stability of ultrathin ZrO2 films prepared by chemical vapor deposition on Si(100)

T.S. Jeon, J.M. White, D. L. Kwong · Applied Physics Letters · 2001 · 271 citations

Natural Sciences, Materials Engineering, Materials Science +17

Electrical and reliability characteristics of ZrO2 deposited directly on Si for gate dielectric application

Wen-Jie Qi, R. Nieh, Byoung Hun Lee et al. · Applied Physics Letters · 2000 · 172 citations

Engineering, Electrical Engineering, Materials Science +17

Effects of interfacial layer growth on the electrical characteristics of thin titanium oxide films on silicon

Byoung Hun Lee, Yongjoo Jeon, K. Zawadzki et al. · Applied Physics Letters · 1999 · 127 citations

Natural Sciences, Materials Engineering, Materials Science +17