Applied Physics Letters · 2012 · 34 citations · 15 references
Natural SciencesMaterials EngineeringMaterials ScienceCeramic MaterialsCeramicsThin FilmsDopingElectrical Properties Of CeramicsFerroelectric CeramicsFerroelectric MaterialsP-n JunctionsPerovskite MaterialsBarium Titanate CeramicsFerroelectric PropertiesFerroelectric Thin FilmsFerroelectricityHeterostructure DevicesHeterostructure MaterialsResistive SwitchingResistive Switching Materials
We investigated the effect of a ferroelectric Pb(Zr0.52Ti0.48)O3 (PZT) thin film on the generation of resistive switching in a stacked Pr0.7Ca0.3MnO3 (PCMO)/Nb-doped SrTiO3 (Nb:STO) heterostructure forming a p-n junction. To promote the ferroelectric effect, the thin PZT active layer was deposited on an epitaxially grown p-type PCMO film on a lattice-matched n-type Nb:STO single crystal. It was concluded that the observed resistive switching behavior in the all-perovskite Pt/PZT/PCMO/Nb:STO heterostructure was related to the modulation of PCMO/Nb:STO p-n junction’s depletion width, which was caused either by the PZT ferroelectric polarization field effect, the electrochemical drift of oxygen ions under an electric field, or both simultaneously.
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Paul W. M. Blom, R.M. Wolf, J. F. M. Cillessen et al. · Physical Review Letters · 1994 · 429 citations